Tb₃Tl₁C₁ is an experimental intermetallic semiconductor compound combining terbium (rare earth), thallium, and carbon. This ternary phase belongs to the broader family of rare-earth-based intermetallics, which are primarily studied for their electronic properties rather than established commercial applications. Research interest in such compounds focuses on potential applications in thermoelectric devices, optoelectronics, and specialized semiconductor research where the rare-earth element provides unique electronic band structure characteristics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 42.60 | GPa | — | ||
Shear Modulus(G) | 21.60 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.03500 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.593 | eV/atom | — |