Tb3 Mn3 Ga2 Si1

semiconductor

· Tb3 Mn3 Ga2 Si1

Tb₃Mn₃Ga₂Si₁ is an intermetallic semiconductor compound combining rare-earth (terbium), transition metal (manganese), and metalloid elements in a defined crystal structure. This is primarily a research material explored for potential applications in magnetic semiconductors and spintronics, where the coupling of magnetic and electronic properties is leveraged for advanced device functionality. The material family represents an emerging class of compounds where rare-earth elements and manganese interactions may enable novel electromagnetic responses not readily available in conventional semiconductors or single-phase alloys.

spintronics researchmagnetic semiconductor devicesrare-earth intermetallic compoundsexperimental condensed matter physicsmagneto-optic applicationsquantum materials research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	59.14	GPa	—
Shear Modulus(G)	12.71	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01790	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.2980	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tb3 Mn3 Ga2 Si1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control