Tb₃Al₁N₁ is a rare-earth nitride compound combining terbium and aluminum, belonging to the ternary nitride semiconductor family. This is a research-phase material with potential applications in high-temperature electronics and optoelectronics, where rare-earth nitrides are explored for their unique electronic and thermal properties. The material represents an emerging class of wide-bandgap semiconductors that could offer advantages in extreme-environment devices, though it remains primarily in academic investigation rather than established industrial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00980 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9940 | eV/atom | — |