Tb₂Sb₁O₂ is an experimental mixed-metal oxide semiconductor combining terbium (a rare-earth element) with antimony and oxygen. This compound represents an emerging class of rare-earth antimonide oxides under investigation for potential optoelectronic and photocatalytic applications, though it remains largely in the research phase with limited commercial deployment. The material's notable feature is its rare-earth content, which can influence electronic band structure and optical properties—characteristics that distinguish it from conventional semiconductors and make it of interest in specialized functional ceramic research.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00450 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.894 | eV/atom | — |