Tb₂S₂F₂ is an experimental rare-earth chalcohalide semiconductor combining terbium, sulfur, and fluorine in a mixed-anion structure. This compound belongs to a family of emerging semiconductors designed for optoelectronic and photonic applications where conventional single-anion semiconductors (such as binary sulfides or fluorides) have limitations. Research into this material class is driven by the ability to engineer bandgaps and electronic properties through compositional tuning, making these systems candidates for next-generation light-emitting devices, photocatalysis, and radiation detection where rare-earth optical activity is advantageous.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 115.1 | GPa | — | ||
Shear Modulus(G) | 62.50 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.353 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.239 | eV/atom | — |