Tb2 Re2 Si2 C1
semiconductorTb₂Re₂Si₂C is a ternary transition metal carbide compound combining rare-earth terbium, refractory rhenium, and silicon with carbon, representing an experimental semiconductor phase in the MAX-phase or transition metal carbide family. This material is primarily of research interest for high-temperature structural and electronic applications, with potential relevance in contexts where the extreme refractory characteristics of rhenium, the thermal stability of rare-earth compounds, and semiconductor behavior are simultaneously valuable. Such materials are being explored to push performance boundaries in extreme-environment electronics and composites, though industrial production and standardized applications remain limited.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |