Tb₂H₆O₆ is a rare-earth hydride oxide compound belonging to the terbium hydride family, classified as a semiconductor with potential applications in advanced materials research. This material is primarily of scientific and experimental interest rather than established industrial use, representing research into rare-earth hydride systems that may offer unique electronic or catalytic properties. The material combines terbium's lanthanide chemistry with hydrogen and oxygen bonding, making it relevant to exploratory work in energy storage, hydrogen-based materials, and rare-earth semiconductor development.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 12,408.8 | ksi | — | ||
Shear Modulus(G) | 4,196.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.791 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.052 | eV/atom | — |