Tb2Ge2 is an intermetallic compound combining terbium (a rare earth element) with germanium, belonging to the broader family of rare-earth germanides that exhibit semiconductor behavior. This material is primarily of research and developmental interest rather than established in high-volume industrial production, with potential applications in thermoelectric devices, magnetic semiconductors, and advanced electronic materials where rare-earth doping provides unique electronic and magnetic properties unavailable in conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 11,738.3 | ksi | — | ||
Shear Modulus(G) | 8,217.8 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000500 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8890 | eV/atom | — |