Tb2Ge2Au2 is an intermetallic compound combining terbium (a rare earth element), germanium, and gold in a fixed stoichiometric ratio, classified as a semiconductor. This is a research-stage material studied for its potential in advanced electronic and photonic applications, leveraging the unique electronic properties that arise from rare earth–transition metal interactions. While not yet widely deployed in mainstream industrial production, materials in this family are of interest for high-performance semiconductor devices, thermoelectric applications, and specialized optoelectronic systems where rare earth elements provide distinctive electronic band structures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 14,260.4 | ksi | — | ||
Shear Modulus(G) | 6,606.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01450 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8540 | eV/atom | — |