Tb₂Cu₁Ge₄O₁₂ is a rare-earth copper germanate ceramic compound that functions as a semiconductor material. This is primarily a research-phase material studied for its potential in advanced electronic and photonic applications, particularly within the broader family of rare-earth oxide semiconductors and multicomponent oxide systems. The material's utility stems from its layered or framework structure combining terbium, copper, and germanium oxides, which can exhibit interesting electronic properties relevant to emerging technologies where conventional semiconductors face limitations.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 97.29 | GPa | — | ||
Shear Modulus(G) | 42.27 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.784 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.204 | eV/atom | — |