Tb2 Ba2 Mn4 O10

semiconductor

· Tb2 Ba2 Mn4 O10

Tb₂Ba₂Mn₄O₁₀ is a mixed-valence oxide semiconductor composed of terbium, barium, and manganese, belonging to the family of complex perovskite-related oxides. This is primarily a research material studied for its potential electrical and magnetic properties arising from mixed Mn oxidation states and rare-earth doping. Applications remain largely experimental, with interest focused on solid-state electronics, magnetoelectric coupling, and functional ceramic devices where the interplay between rare-earth and transition-metal chemistry can be engineered for specific electronic or magnetic responses.

research ceramicsmagnetoelectric materialssolid-state electronicsfunctional oxidesrare-earth semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00900	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.605	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tb2 Ba2 Mn4 O10

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control