Tb1 is a semiconductor material with terbium as a primary constituent, belonging to the rare-earth element family of functional semiconductors. While specific composition details are not provided, terbium-based semiconductors are typically investigated for optoelectronic and magnetic applications where rare-earth electronic properties are advantageous. This material represents specialized research-phase development rather than a commodity semiconductor, making it relevant for engineers exploring advanced photonic devices, magnetic sensors, or high-performance computing applications requiring rare-earth functionality.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 41.43 | GPa | — | ||
Shear Modulus(G) | -1.780 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.03600 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.1460 | eV/atom | — |