Tb₁₀Si₆ is an intermetallic compound composed of terbium and silicon, belonging to the rare-earth silicide family of semiconducting materials. This compound is primarily of research and development interest rather than established commercial production, representing the broader class of rare-earth intermetallics being investigated for their electronic and thermal properties. The material's potential applications leverage its semiconducting characteristics and the unique properties imparted by terbium, a lanthanide element known for magnetic and optical functionality.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 10,951.9 | ksi | — | ||
Shear Modulus(G) | 7,473.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00440 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6730 | eV/atom | — |