TbGaRh₂ is an intermetallic semiconductor compound combining terbium, gallium, and rhodium in a 1:1:2 stoichiometry. This is a research-phase material studied for its electronic and magnetic properties rather than an established commercial compound. Intermetallics in this family are of interest for thermoelectric applications, magnetic devices, and advanced semiconductor research where the combination of rare-earth (Tb) and transition metal (Rh) elements can produce tunable band structures and strong spin-orbit coupling effects.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 20,783.9 | ksi | — | ||
Shear Modulus(G) | 5,299.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00550 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8020 | eV/atom | — |