Tb1 Bi5 O9

semiconductor

· Tb1 Bi5 O9

Tb₁Bi₅O₉ is a ternary oxide semiconductor compound combining terbium and bismuth, belonging to the family of mixed metal oxides studied for potential optoelectronic and photocatalytic applications. This material is primarily investigated in research and development contexts rather than established industrial production, with potential applications in photocatalysis, UV absorption, and next-generation semiconductor devices where the combination of rare-earth (terbium) and bismuth chemistry offers tunable electronic and optical properties distinct from binary alternatives.

photocatalytic materialsUV-visible absorberssemiconductor researchrare-earth oxide compoundsoptoelectronic devices (emerging)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.849	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.711	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tb1 Bi5 O9

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control