Tb1 Bi2 I1 O4

semiconductor
· Tb1 Bi2 I1 O4

Tb₁Bi₂I₁O₄ is a rare-earth bismuth iodide oxide semiconductor compound combining terbium (a lanthanide), bismuth, iodine, and oxygen in a layered crystal structure. This is a research-phase material studied for its potential optoelectronic and photocatalytic properties; it belongs to the broader family of mixed-halide perovskites and bismuth-based semiconductors being explored as alternatives to lead halides for next-generation devices. The material is notable for combining rare-earth doping with bismuth chemistry, offering potential advantages in radiation tolerance, photon absorption tuning, and toxicity reduction compared to conventional halide perovskites, though industrial applications remain in early evaluation.

photovoltaic researchradiation detectionphotocatalysisoptoelectronic deviceslead-free semiconductorsthin-film electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
—
eV——
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
—
eV/atom——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.