Tb₁Bi₂Cl₁O₄ is a rare-earth bismuth oxyhalide semiconductor compound combining terbium, bismuth, chlorine, and oxygen. This is a research-phase material belonging to the broader family of mixed-metal halide semiconductors, which are under investigation for photocatalytic and optoelectronic applications where tunable bandgaps and layered crystal structures offer advantages over conventional oxide semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.385 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.215 | eV/atom | — |