Tb1 Bi2 Br1 O4

semiconductor

· Tb1 Bi2 Br1 O4

Tb₁Bi₂Br₁O₄ is an experimentally synthesized mixed-metal halide oxide semiconductor combining terbium, bismuth, bromine, and oxygen. This rare-earth bismuth compound belongs to the family of layered halide perovskites and related structures, which are of significant research interest for optoelectronic and photonic applications due to their tunable bandgaps and potential for efficient light emission or detection. The material remains largely in the research phase; its practical utility depends on further development of synthesis methods and demonstration of performance advantages over established semiconductors in specific device contexts.

experimental photonics researchhalide perovskite developmentrare-earth compound studiesoptoelectronic device prototypingbandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	11,630.4	ksi	—
Shear Modulus(G)	6,377.7	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.440	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.169	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tb1 Bi2 Br1 O4

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control