Tb0.52Pr2.48Ga1.67S7 is a rare-earth gallium sulfide semiconductor compound combining terbium and praseodymium dopants in a gallium sulfide host lattice. This is an experimental/research material developed for advanced optoelectronic and photonic applications where rare-earth ion luminescence and semiconducting properties can be leveraged simultaneously. The rare-earth dopants enable efficient light emission and energy conversion, making this material family candidates for next-generation solid-state lighting, laser hosts, and scintillation detection systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.610 | eV | — |