Tantalum selenide (TaSe) is a transition metal chalcogenide ceramic compound combining tantalum with selenium, belonging to the layered dichalcogenide family of materials. It is primarily of research interest for optoelectronic and electronic device applications, particularly in two-dimensional materials research, where its layered crystal structure enables potential use in thin-film transistors, photodetectors, and energy storage devices. TaSe and related chalcogenides are investigated as alternatives to more commonly used materials like MoS₂ due to their distinct electronic bandgap and layer-dependent properties, though industrial applications remain limited while the material continues to be developed in laboratory and pilot-scale settings.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.4588 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.5268 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.1109 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data