TaSe₃ is a tantalum diselenide compound belonging to the transition metal chalcogenide ceramic family, characterized by layered crystal structure and anisotropic electronic properties. This material is primarily of research interest for advanced electronics and quantum materials applications, where its quasi-one-dimensional structure and exceptional electrical conductivity along certain crystallographic directions make it attractive for exploring charge-density wave phenomena and potential device engineering. Compared to conventional semiconductors, TaSe₃ offers unique tunable electronic behavior, though commercial deployment remains limited and development is largely confined to academic and specialized materials research contexts.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2796 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | DFT · OptB88vdW | ||
| ↳ | 0.000 | eV | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.6863 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data