Tantalum trisulfide (TaS₃) is a layered transition metal chalcogenide ceramic compound belonging to the family of quasi-one-dimensional materials with anisotropic crystal structure. This material is primarily of research and academic interest rather than established industrial production, investigated for its unique electronic properties including charge-density wave behavior and potential semiconducting or quasi-metallic characteristics depending on temperature and doping conditions.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2487 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.7587 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.1052 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data