Tantalum oxide (TaO₃) is a ceramic compound belonging to the transition metal oxide family, valued for its chemical stability, high melting point, and dielectric properties. It is primarily used in electronic components, particularly in capacitors and thin-film applications in semiconductor manufacturing, as well as in specialized optical and refractory applications where resistance to corrosion and thermal stress is critical. Tantalum oxides are preferred in high-reliability electronics due to superior performance compared to conventional dielectrics, though they are typically deployed as thin films or in composite structures rather than bulk monolithic components.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 10.87 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | DFT · OptB88vdW | ||
| ↳ | 0.000 | eV | DFT · TBmBJ | ||
Magnetic Moment(μB) | 1.736 | µB | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.000913 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.000821 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | 30.05 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 28.31 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.125 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -1.539 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data