TaGeO2N is an experimental oxynitride ceramic composed of tantalum, germanium, oxygen, and nitrogen elements. This material belongs to the family of complex oxynitrides, which are primarily studied for photocatalytic and electronic applications due to their tunable bandgap and enhanced chemical stability compared to simple oxides or nitrides. Research interest in TaGeO2N focuses on environmental remediation (pollutant degradation under visible light), hydrogen generation, and potential semiconductor device applications where the nitrogen incorporation improves performance over parent oxide phases.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | -1.573 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.380 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data