TaGaN3 — Properties & Data | MatWorld

TaGaN3

ceramic

· TaGaN3

TaGaN₃ is a ternary ceramic compound combining tantalum, gallium, and nitrogen, belonging to the family of refractory nitride ceramics. This material is primarily of research and development interest rather than established industrial production, with potential applications in high-temperature structural and electronic components where extreme thermal stability and hardness are required. The tantalum-gallium-nitride system is being investigated for advanced semiconductor devices, wear-resistant coatings, and next-generation high-temperature applications where conventional nitrides reach performance limits.

refractory coatingshigh-temperature electronicswear-resistant surfacessemiconductor processingexperimental advanced ceramicsextreme environment applications

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	0.2269	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.320	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

TaGaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental