TaGaBi₂O₇ is a complex mixed-metal oxide ceramic composed of tantalum, gallium, and bismuth. This compound is primarily of research and developmental interest rather than established in high-volume manufacturing, with potential applications in advanced electronic and photonic device materials. The combination of tantalum and bismuth oxides in a gallium-containing matrix suggests interest in materials for wide-bandgap semiconductors, photocatalysis, or specialized dielectric applications where the unique electronic properties of this ternary system offer advantages over conventional binary oxides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.3227 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.076 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 6.868 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.04370 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -2.042 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data