TaBeO2N
semiconductor· TaBeO2N
TaBeO2N is an experimental oxynitride semiconductor compound combining tantalum, beryllium, oxygen, and nitrogen. This material belongs to the emerging class of mixed-anion semiconductors, which are of research interest for photocatalytic and optoelectronic applications where nitrogen doping can modify band structure and enhance visible-light activity compared to pure oxides. While not yet commercialized at scale, oxynitride semiconductors like this are being explored in laboratory settings for energy conversion and environmental remediation, where the tunable electronic properties offer potential advantages over conventional oxide or nitride semiconductors.
photocatalysis (research)water splitting (experimental)optoelectronic devices (development)visible-light photocatalysts (laboratory)semiconductor research
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.