TaBeO2N is an experimental oxynitride semiconductor compound combining tantalum, beryllium, oxygen, and nitrogen. This material belongs to the emerging class of mixed-anion semiconductors, which are of research interest for photocatalytic and optoelectronic applications where nitrogen doping can modify band structure and enhance visible-light activity compared to pure oxides. While not yet commercialized at scale, oxynitride semiconductors like this are being explored in laboratory settings for energy conversion and environmental remediation, where the tunable electronic properties offer potential advantages over conventional oxide or nitride semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.4000 | eV | — | ||
Magnetic Moment(μB) | -0.00120 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.9600 | eV/atom | — |