TaAcO3

semiconductor

· TaAcO3

TaAcO3 is a mixed-metal oxide semiconductor combining tantalum and acetate-derived components, representing an experimental compound in the broader family of complex oxide semiconductors. While not yet established in mainstream commercial applications, materials in this composition space are being investigated for advanced electronic and photocatalytic applications where the unique properties of tantalum oxides can be leveraged with secondary metal incorporation to tune band structure and electrochemical response.

photocatalytic materials (research)electronic/optoelectronic devices (emerging)thin-film semiconductors (experimental)energy conversion researchmaterials science development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.223	eV	—
Magnetic Moment(μB)	0.000	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.889	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

TaAcO3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control