Ta6Sn2S12 is a ternary sulfide semiconductor compound combining tantalum, tin, and sulfur elements. This material belongs to the family of mixed-metal chalcogenides and appears to be a research-phase compound rather than an established industrial material; such systems are typically investigated for potential optoelectronic, photovoltaic, or solid-state device applications where the bandgap and electronic properties can be tuned by composition.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02120 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.096 | eV/atom | — |