Ta6 N10
semiconductorTa6N10 is a tantalum nitride ceramic compound belonging to the refractory nitride family, likely an experimental or specialized material engineered for high-performance applications requiring thermal and chemical stability. Tantalum nitride compounds are investigated for microelectronics, hard coatings, and barrier layer applications where their high melting point and resistance to corrosion outperform conventional alternatives. This specific stoichiometry represents a research-phase material; engineers would consider it for advanced applications in semiconductor processing, wear-resistant surface treatments, or extreme-environment components where tantalum's inherent properties—exceptional hardness and chemical inertness—are critical to performance.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |