Ta4 Zn4 Sn2 O16

semiconductor

· Ta4 Zn4 Sn2 O16

Ta₄Zn₄Sn₂O₁₆ is a mixed-metal oxide semiconductor compound combining tantalum, zinc, and tin oxides in a defined stoichiometric ratio. This is a research-stage material studied for its potential in optoelectronic and photocatalytic applications, leveraging the wide bandgap characteristics typical of multi-cation oxide semiconductors. The tantalum-zinc-tin oxide family offers tunable electronic properties through compositional engineering and is of interest as an alternative to conventional transparent conductive oxides (TCOs) and photocatalysts, though industrial deployment remains limited compared to established alternatives like indium tin oxide (ITO) or zinc oxide (ZnO).

Photocatalytic applicationsTransparent conductive layersOptoelectronic devicesResearch semiconductorsWide-bandgap electronicsEnvironmental remediation materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.693	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.319	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ta4 Zn4 Sn2 O16

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control