Ta4Zn2O12 is a mixed-metal oxide semiconductor compound containing tantalum and zinc in a defined stoichiometric ratio. This material belongs to the family of complex metal oxides and represents a research-phase compound of interest for semiconductor and optoelectronic applications, where the combination of tantalum and zinc oxides offers potential for tunable electronic properties and stable thermal characteristics.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 26,145.5 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 12,377.5 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.915 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.691 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data