Ta₄Se₈ is a layered transition metal chalcogenide semiconductor compound combining tantalum and selenium in a specific stoichiometric ratio. This material belongs to the family of reduced-dimensional semiconductors that exhibit quasi-2D electronic properties and is primarily of research interest for next-generation optoelectronic and quantum device applications. Ta₄Se₈ and related tantalum chalcogenides are being investigated for their potential in photodetection, field-effect transistors, and studies of charge density wave phenomena, offering advantages over conventional semiconductors in specific niche applications requiring strong light-matter interactions or unique electronic band structures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 54.41 | GPa | — | ||
Shear Modulus(G) | 33.51 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00170 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8210 | eV/atom | — |