Ta₄S₉Br₈ is a mixed-halide layered chalcogenide semiconductor compound combining tantalum, sulfur, and bromine in a complex stoichiometric structure. This is an experimental research material belonging to the family of transition metal chalcohalides, which are of interest for their tunable electronic properties and potential in next-generation optoelectronic and thermoelectric devices. Such compounds are still primarily in the laboratory development phase, with potential applications emerging in thin-film electronics, photovoltaics, and solid-state sensing where compositional engineering offers band-gap tunability and enhanced light absorption compared to simpler binary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.194 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8480 | eV/atom | — |