Ta₄O₁₀ (tantalum oxide) is an oxygen-deficient ceramic semiconductor compound belonging to the tantalum oxide family, which exhibits mixed-valence electronic properties. This material is primarily investigated in research contexts for advanced electronic and photocatalytic applications, where its defect structure and semiconducting behavior offer potential advantages over stoichiometric tantalum pentoxide in devices requiring tunable bandgap or enhanced charge carrier properties.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 32,457.9 | ksi | — | ||
Shear Modulus(G) | 10,618.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00340 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6570 | eV/atom | — |