Ta₄O₁₀ is a tantalum oxide semiconductor compound that belongs to the family of transition metal oxides with mixed valence states. This material is primarily investigated in research contexts for its potential in electronic and photocatalytic applications, offering properties intermediate between simple binary oxides and more complex polyoxides. Its notable characteristics include moderate mechanical stiffness and semiconductor behavior, making it of interest for developing advanced materials in optoelectronics, catalysis, and thin-film device technologies where tantalum oxides are valued for their chemical stability and electronic tunability.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 30,425.7 | ksi | — | ||
Shear Modulus(G) | 10,652.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.344 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.015 | eV/atom | — |