Ta4 N4 O4
semiconductorTa₄N₄O₄ is a mixed-valence tantalum oxynitride ceramic compound belonging to the transition metal ceramic family, combining refractory and semiconductor properties. This material is primarily of research interest for advanced applications requiring high thermal stability and electrical functionality, with potential use in semiconductor devices, catalysis, and high-temperature structural applications where the coupling of nitrogen and oxygen in a tantalum matrix enables unique electronic properties. Compared to pure tantalum oxide or nitride ceramics, the oxynitride composition offers tunable bandgap and enhanced performance in oxygen reduction reactions and photocatalytic processes, making it notable for next-generation energy conversion and environmental remediation technologies.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |