Ta4Mn4O14 is a complex mixed-metal oxide semiconductor composed of tantalum and manganese in a defined stoichiometric ratio. This compound belongs to the family of transition-metal oxides and is primarily investigated in research contexts for functional ceramic applications where controlled electrical and magnetic properties are desired. The material's potential lies in energy storage, catalysis, and electronic device applications where the synergistic properties of tantalum and manganese oxides can be leveraged; however, it remains largely experimental and is not yet a mainstream engineering material in high-volume production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.09180 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.388 | eV/atom | — |