Ta4 H8 O14

semiconductor

· Ta4 H8 O14

Ta₄H₈O₁₄ is a tantalum oxide hydride compound, representing a mixed-valence tantalum oxide phase that exists in the broader family of reduced tantalum oxides. This material is primarily of research and specialized interest rather than established commercial production, studied for its unique structural and electronic properties arising from oxygen vacancies and hydrogen incorporation. Applications remain largely experimental, with potential interest in semiconductor devices, photocatalysis, and energy storage systems where the defect structure and mixed oxidation states of tantalum could enable novel functionality compared to conventional Ta₂O₅.

experimental semiconductor researchphotocatalytic materialsenergy storage applicationsdefect-engineered oxidestantalum oxide phaseselectronic materials development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.934	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.950	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ta4 H8 O14

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control