Ta4Cu4O12 is a complex mixed-metal oxide semiconductor composed of tantalum, copper, and oxygen in a defined stoichiometric ratio. This is a research-phase compound rather than an established commercial material; it belongs to the family of ternary and quaternary oxides being investigated for electronic and photocatalytic applications. The material's potential lies in leveraging the distinct electronic properties of both tantalum (known for high refractive index and corrosion resistance) and copper (redox-active element) oxides, making it a candidate for emerging technologies where conventional binary oxides are insufficient.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.658 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.250 | eV/atom | — |