Ta₃In₂S₆ is a ternary chalcogenide ceramic compound combining tantalum, indium, and sulfur—a relatively uncommon composition that exists primarily in research contexts rather than established industrial production. This material belongs to the broader family of metal sulfide ceramics, which are investigated for semiconducting, photocatalytic, and optoelectronic applications due to their tunable band gaps and layered crystal structures. While not yet a mainstream engineering material, tantalum-indium sulfides show promise in thin-film technologies and energy conversion devices where chemical stability and semiconductor properties are needed.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2428 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -1.025 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data