Ta30 is a tantalum-based semiconductor material, likely a tantalum compound or doped tantalum system used in specialized electronic applications. The material occupies a niche in semiconductor technology where tantalum's high melting point, chemical inertness, and electron density make it valuable for high-temperature or chemically aggressive operating environments. Ta30 is primarily employed in specialized electronics, high-reliability aerospace systems, and research applications where conventional silicon or gallium arsenide semiconductors cannot withstand extreme conditions or where tantalum's unique properties provide performance advantages over standard alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000400 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.01300 | eV/atom | — |