Ta2Zn4Cu2O12 is a complex mixed-metal oxide semiconductor composed of tantalum, zinc, and copper. This is a research-phase compound rather than a commercially established material, belonging to the family of multinary oxides that are being investigated for novel electronic and photonic applications. The material's potential lies in applications requiring semiconducting behavior from oxide systems, where the combination of transition metals (tantalum and copper) with zinc can enable tunable electrical and optical properties for niche advanced device applications.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 147.9 | GPa | — | ||
Shear Modulus(G) | 51.57 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02140 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.727 | eV/atom | — |