Ta2Te4Br12 is a mixed-halide chalcogenide semiconductor compound containing tantalum, tellurium, and bromine. This is an experimental material primarily studied in condensed matter physics and materials research rather than established industrial production, belonging to a family of layered halide semiconductors being explored for next-generation electronic and optoelectronic devices. The tantalum-tellurium-halide system is of particular interest for tunable bandgap engineering, potential photovoltaic applications, and quantum materials research where the combination of heavy elements and layered structure can produce unusual electronic properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 2,001.5 | ksi | — | ||
Shear Modulus(G) | 1,024 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8168 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6720 | eV/atom | — |