Ta2Te4Br10O1 is an experimental mixed-halide tantalum telluride semiconductor compound combining tantalum, tellurium, bromine, and oxygen in a complex layered structure. This is a research-phase material primarily of interest in solid-state chemistry and materials discovery rather than established industrial production. The compound belongs to an emerging family of halide perovskites and mixed-anion semiconductors being investigated for optoelectronic properties, photovoltaic potential, and exotic electronic behavior, though it remains largely in academic development without widespread commercial deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 18.04 | GPa | — | ||
Shear Modulus(G) | 8.007 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8451 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8410 | eV/atom | — |