Ta₂Sn₂S₄ is a layered transition metal chalcogenide semiconductor composed of tantalum, tin, and sulfur. This is a research-stage material being investigated for its potential in optoelectronic and energy-storage applications, where its layered crystal structure and tunable electronic properties are of interest compared to conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000600 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9440 | eV/atom | — |