Tantalum pentoxide (Ta₂O₅) is a wide-bandgap ceramic oxide semiconductor with high refractive index and excellent dielectric properties. It is primarily used in thin-film capacitors, optical coatings, and integrated circuit applications where its stability, high permittivity, and resistance to corrosion are valuable; it is also under investigation for next-generation photoelectrochemical devices and advanced gate dielectrics in microelectronics where it offers advantages over traditional silicon dioxide in miniaturized components.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.519 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.646 | eV/atom | — |