Ta2 O4 F2
semiconductorTa₂O₄F₂ is an oxide-fluoride ceramic compound containing tantalum, representing an experimental material in the family of mixed-anion ceramics that combine oxide and fluoride chemistries. This fluorine-substituted tantalum oxide belongs to an emerging class of semiconducting ceramics being investigated for advanced electronic and photonic applications where the fluoride substitution can modify bandgap, ionic conductivity, and crystal structure relative to conventional tantalum oxide phases. The material remains primarily in research contexts, with potential relevance in solid-state chemistry where tailored composition offers a pathway to tune electrical and optical properties beyond what single-anion systems provide.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |