Ta2 N3 O1

semiconductor

· Ta2 N3 O1

Ta2N3O1 is an oxynitride ceramic compound combining tantalum, nitrogen, and oxygen, belonging to the family of refractory transition-metal oxynitrides. This material is primarily of research and development interest rather than established commercial production, being studied for applications requiring high-temperature stability, hardness, and chemical inertness. Tantalum oxynitrides are notable alternatives to conventional nitride and oxide ceramics where both thermal shock resistance and oxidation resistance are needed simultaneously.

high-temperature ceramics (research phase)refractory coatingssemiconductor thin filmscorrosion-resistant surfaceshard surface applicationsthermal barrier materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00320	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.5920	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ta2 N3 O1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control