Ta2 N3 F1

semiconductor

· Ta2 N3 F1

Ta2N3F1 is an experimental tantalum nitride fluoride semiconductor compound that combines tantalum nitride's refractory properties with fluorine doping to modify electronic characteristics. This material family is under investigation for advanced semiconductor and thin-film applications where high thermal stability, chemical resistance, and tunable electronic properties are required. As a research-phase compound, Ta2N3F1 represents an emerging strategy in materials engineering to engineer new semiconductor platforms with enhanced performance in extreme environments or novel device architectures.

thin-film semiconductorshigh-temperature electronicsresearch materialsrefractory compoundsadvanced device engineeringband-gap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	259.9	GPa	—
Shear Modulus(G)	94.03	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.09920	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.082	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ta2 N3 F1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control